The two limiting cases of isotropic and anisotropic distribution of the normal stresses σ z are considered. The transistor is represented by two parallel transistors with equivalent areas S F and S 0 - S F, the first of which is assumed to be subjected to a uniaxial compression and the second is taken to be free of mechanical stresses. The dependence of the minority carrier lifetime on σ is ignored. The changes in the transistor parameters are due to the influence of mechanical stress σ on the effective width of the forbidden band. The analysis is carried out on the assumption that the current is due to diffusion of the minority carriers.
A theoretical analysis is given of the dependence of the parameters of a transistor on a force F applied to the emitter and distributed nonuniformly across its surface.
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